四元系化合物Cu_2ZnSnS_4単結晶中の固有点欠陥と電気的特性の相関

• 永岡, 章

• 吉野, 賢二

書誌事項

タイトル別名

• Correlation between Intrinsic Point Defects and Electrical Properties in the Quaternary Compound Cu_2ZnSnS_4 Single Crystal
• シゲンケイ カゴウブツ Cu_2ZnSnS_4 タンケッショウチュウ ノ コユウ テンケッカン ト デンキテキ トクセイ ノ ソウカン

抄録

The quaternary compound Cu_2ZnSnS_4 (CZTS) single crystals were successfully grown by Traveling Heater Method (THM). We determined that suitable THM growth conditions for CZTS single crystals are a Sn solution with X = 70 mol% and growth temperature of 900˚C, on the basis of the CZTS-Sn pseudobinary phase diagram. Temperature dependent Hall effect measurements from 20 to 300 K have been performed on CZTS single crystals. The conductivity mechanisms can be described by a two-path system using Mott variable range hopping and typical thermal activation conduction. The center level of the acceptor band is 132 meV above the valence band maximum and is of width 40 meV. A correlation between the activation energy and acceptor concentration in CZTS is observed.

収録刊行物

• 宮崎大学工学部紀要

  宮崎大学工学部紀要 43 101-107, 2014-07-31

  宮崎大学工学部

キーワード

• Cu_2ZnSnS_4, Kesterite compound, conduction mechanism, Mott- variable range hopping

詳細情報

• CRID: 1050007314771895424
• NII論文ID: 110009817988
• NII書誌ID: AA00732558
• ISSN: 05404924
• HANDLE: 10458/4983
• Web Site: https://miyazaki-u.repo.nii.ac.jp/records/2864
• 本文言語コード: ja
• 資料種別: departmental bulletin paper
• データソース種別:
  • IRDB
  • CiNii Articles