プラズモニクスの高効率発光デバイスへの応用(<特集>固体紫外光源を目指した窒化物半導体結晶成長の最前線)

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タイトル別名
  • Applications of Plasmonics to High Efficiency Light Emitting Devices(<Special Issue>Innovation of Crystal Growth Technology of III-Nitride Semiconductors for Deep Ultraviolet LED)
  • プラズモニクスの高効率発光デバイスへの応用
  • プラズモニクス ノ コウコウリツ ハッコウ デバイス エ ノ オウヨウ

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抄録

Plasmonics is very useful to increase the light emission efficiencies of InGaN/GaN-based quantum wells (QWs) and the other various materials. By using this technique, highefficiency and high-speed light emission is predicted for optically as well as electrically pumped light-emitting devices. Flexible tuning of the plasmonic resonance within the visible wavelength range was achieved by controlling the metallic nano-structures. To extend the tuning range into UV regions, we fabricated the nanograin structures of Al and succeeded in remarkable enhancements of UV light emissions from AlGaN/AlN-based QWs. We found that Al is very useful also for wider tuning of the plasmonic resonance at the visible wavelength region. The plasmonic tuning at the IR regions were also discussed by using Ta nanoparticle. These tunable plasmonics over the UV-IR range should bring new possibilities of applications to plasmonics and lead to new class of several photonic and electronic technologies.

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