I-2-1 Planarization of Gallium Nitride Wafers Using Novel Polishing Technique Utilizing Catalyst Surface Reactio

• SANO Yasuhisa

  Osaka University

• SADAKUNI Shun

  Osaka University

• ASANO Hiroya

  Osaka University

• YAGI Keita

  Ebara Corporation

• ARIMA Kenta

  Osaka University

• YAMAUCHI Kazuto

  Osaka University

Bibliographic Information

Other Title

• I-2-1 触媒表面反応を利用した新しい研磨法によるGaN基板表面の平坦化(窒化物半導体デバイスの精密加工プロセス-結晶基板の将来加工技術-,口頭発表)

Abstract

It is very difficult to produce a smooth and damage-free gallium nitride(GaN) surface using the conventional polishing method utilized for silicon wafer processing because of the hardness,brittleness and chemicalinertness of GaN.We have developed a novel polishing method named CARE(catalyst-referred etching),which is an abrasive-free chemical polishing method involving a chemical reaction between the surface of a workpiece and a catalytic plate in a chemical solution or pure water.Here,we report that a GaN substrate with a damage-free and atomically smooth surface can be obtained by the CARE process

Journal

• The Proceedings of the Conference on Information, Intelligence and Precision Equipment : IIP

  The Proceedings of the Conference on Information, Intelligence and Precision Equipment : IIP 2013 (0), 22-23, 2013

  The Japan Society of Mechanical Engineers

Keywords

• GaN
• Catalyst
• Polishing
• Planarization

Details

• CRID: 1390001205898571136
• NII Article ID: 110009962405
• DOI: 10.1299/jsmeiip.2013.22
• ISSN: 24243140
• Web Site: https://www.jstage.jst.go.jp/article/jsmeiip/2013/0/2013_22/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed