I-2-2 単結晶ダイヤモンド基板と窒化物基板の高能率精密加エプロセスに関する研究 : 将来型究極デバイス製造プロセスを目指して(窒化物半導体デバイスの精密加工プロセス-結晶基板の将来加工技術-,口頭発表)
書誌事項
- タイトル別名
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- I-2-2 Proposal of a highly efficient precision processing for diamond and nitride substrate : process for manufacturing ultimate semiconductor device
抄録
The near-future process of semiconductor wafer planarization for hard-to-process wide bandgap semiconductor,such as gallium nitride (GaN),silicon carbide (SiC), and semiconductor diamond which isthought to be the ultimate semiconductor material is proposed.The process is divided into two steps.First,the bulk material is processed by femtosecond laser,results in the pseudo-radical state over the surface.Next,theprocessed specimen is introduced to the novel CMP machine,which is merged together with plasma CVM apparatus.This study we introduce the polishing process and concepts in the new planarization process, and report some results of the preliminary experiments.
収録刊行物
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- IIP情報・知能・精密機器部門講演会講演論文集
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IIP情報・知能・精密機器部門講演会講演論文集 2013 (0), 24-25, 2013
一般社団法人 日本機械学会
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詳細情報 詳細情報について
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- CRID
- 1390001205901126912
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- NII論文ID
- 110009962406
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- ISSN
- 24243140
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可