16pCB-6 Electronic structure of the outermost layer in multilayer silicene grown on Ag(111)

• Lin C.-L.

  Department of Advanced Materials Science, The University of Tokyo

• Hagino T.

  Department of Basic Science, The University of Tokyo

• Ito Y.

  Department of Basic Science, The University of Tokyo

• Nagao R.

  Department of Advanced Materials Science, The University of Tokyo

• Kawahara K.

  Department of Advanced Materials Science, The University of Tokyo

• Aoki M.

  Department of Basic Science, The University of Tokyo

• Masuda S.

  Department of Basic Science, The University of Tokyo

• Arafune R.

  MANA NIMS

• Kawai M.

  Department of Advanced Materials Science, The University of Tokyo

• Takagi N.

  Department of Advanced Materials Science, The University of Tokyo

Bibliographic Information

Other Title

• 16pCB-6 Ag(111)上多層シリセン最表面の電子状態

Journal

• Meeting Abstracts of the Physical Society of Japan

  Meeting Abstracts of the Physical Society of Japan 70.2 (0), 2254-, 2015

  The Physical Society of Japan

Details

• CRID: 1390282680931163648
• NII Article ID: 110010029848
• DOI: 10.11316/jpsgaiyo.70.2.0_2254
• ISSN: 21890803
• Text Lang: en
• Data Source:
  • JaLC
  • CiNii Articles