Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions

• Nakajima, Anri

• Ito, Yuhei

• Yokoyama, Shin

抄録

Uniformly doped Si single-electron transistors consisting of a one-dimensional regular array of multiple tunnel junctions (MTJs) and islands have been fabricated. The Coulomb blockade effect is found to play an important role in carrier conduction in the MTJ system at low temperatures (6 K). The conduction mechanism can be interpreted well by considering soliton. The soliton extends less than three islands in our MTJs, and the energy of a single soliton is found to be 0.024 eV from an analysis of low-temperature current–voltage characteristics. For high-temperature operation, it is effective to reduce the parasitic capacitance of each island, which leads to an increase in soliton length.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 81 (4), 733-735, 2002-07-22

  American Institute of Physics

詳細情報

• CRID: 1050577740964380032
• NII論文ID: 120000879709
• NII書誌ID: AA00543431
• Web Site: http://ir.lib.hiroshima-u.ac.jp/00018591
• 本文言語コード: en
• 資料種別: journal article
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