Formation of Ohmic hole injection by inserting an ultrathin layer of molybdenum trioxide between indium tin oxide and organic hole-transporting layers

• Matsushima, Toshinori

• Kinoshita, Yoshiki

• Murata, Hideyuki

抄録

Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N,N´-diphenyl-N,N´-bis(1-naphthyl)-1,1´-biphenyl-4,4´-diamine (α-NPD) layers were measured with various thicknesses of a molybdenum trioxide (MoO_3) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm-thick MoO_3 layer forms Ohmic hole injection at the ITO/MoO_3/α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to an electron transfer from ITO and α-NPD to MoO_3.

identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/7783

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 91 (25), 253504-1-253504-3, 2007-11-17

  American Institute of Physics

詳細情報

• CRID: 1050564287490669184
• NII論文ID: 120001009661
• ISSN: 00036951
• Web Site: http://hdl.handle.net/10119/7783
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles
  • KAKEN