Ultra-low-frequency self-oscillation of photocurrent in InxGa1–xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes

• Satake A.

• Tanigawa K.

• Kimura T.

• Fujiwara K.

• Sano N.

抄録

We report an observation of ultra-low-frequency self-oscillation of photocurrent in InxGa1–xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes. The photocurrent intensity shows self-oscillations with a characteristic frequency of ~0.1 Hz at low temperatures under reverse bias voltages. The photocurrent self-oscillation depends on applied bias voltage, temperature, illumination power, and indium content of quantum-well layers. These dependences indicate that the photocurrent self-oscillation is attributed to photogenerated carriers trapped in localized centers within InxGa1–xAs quantum-well regions.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 85 (16), 3483-3485, 2004-10-18

  American Institute of Physics

キーワード

• indium compounds
• aluminium compounds
• gallium arsenide
• semiconductor quantum wells
• quantum well devices
• p-i-n diodes
• photoconductivity
• photoemission
• electron traps
• hole traps

詳細情報

• CRID: 1573950402372970752
• NII論文ID: 120002440578
• NII書誌ID: AA00543431
• ISSN: 00036951
• Web Site: http://hdl.handle.net/10228/360
• 本文言語コード: en
• データソース種別:
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