Cathodoluminescence spectroscopy of ambipolar diffusion in (Al,Ga)As barriers and capture of nonequilibrium carriers in GaAs quantum well

• Fujiwara K.

• Jahn U.

• Grahn H.T.

抄録

Ambipolar vertical diffusion of carriers generated in an Al0.3Ga0.7As barrier is investigated by cathodoluminescence CL spectroscopy in a system containing a sequence of GaAs-based quantum wells QWs . The intensity distribution of the CL line scan exhibits a single exponential decay for the first QW of the sequence, reflecting a pure diffusion-limited transport. However, the CL line scans of the second, third, and fourth QWs are governed by diffusion only for large separations between the electron beam and the corresponding QW. For smaller distances, the CL intensity distribution is significantly influenced by the carrier capture into the intervening QWs.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 93 (10), 103504-1-103504-3, 2008-09-08

  American Institute of Physics

キーワード

• Ⅲ-Ⅴsemiconductors

詳細情報

• CRID: 1570291227675792768
• NII論文ID: 120002441042
• NII書誌ID: AA00543431
• ISSN: 00036951
• Web Site: http://hdl.handle.net/10228/1171
• 本文言語コード: en
• データソース種別:
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