Molecular design of hole transport materials for obtaining high durability in organic electroluminescent diodes

• 安達, 千波矢

  (株)リコー 化成品技術研究所

• 永井, 一清

  (株)リコー 化成品技術研究所

• 田元, 望

  (株)リコー 化成品技術研究所

抄録

The molecular design of hole transport materials (HTMs) for producing high durability in organic layered electroluminescent (EL) diodes was elucidated. The durability tests were examined using fourteen hole transport materials in the cell structure of an anode/hole transport layer (HTL)/emitter layer (EML)/cathode. The ionization potential (Ip) of HTLs was found to be the dominant factor for obtaining high durability in organic EL devices. The formation of the small energy barrier at the interface of a HTL/anode was required for high durability. Moreover, no straightforward relations between melting point, glass transition temperature of the HTMs, and durability of the EL devices were observed. The EL device using the HTM having a low Ip (5.08 eV) showed an especially remarkable stability. In this case, the half-life period of the initial luminance was beyond 500 h.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 66 (20), 2679-2681, 1995-05-15

  American Institute of Physics

キーワード

• Sociology of Education
• university
• community
• partnership

詳細情報

• CRID: 1050017057728390528
• NII論文ID: 120002893735
• NII書誌ID: AA00543431
• HANDLE: 2324/19442
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles