Micro-patterning of Si(100) surfaces by ethanol cluster ion beams

• 高岡, 義寛

• Ryuto, Hiromichi

• Ozaki, Ryosuke

• Mukai, Hiroshi

• Takeuchi, Mitsuaki

抄録

The irradiation of Si(100) surfaces by ethanol cluster ion beams exhibited high-rate sputtering and low-damage formation. The sputtered depth increased with increase of the acceleration voltage for ethanol cluster ions, and the sputtering yield was a few hundreds times larger than that by Ar monomer ion beams. Also, the RBS channeling measurement showed that the irradiation damage was much less than that by Ar monomer ion irradiation. Furthermore, the AFM image showed that the surface roughness of the irradiated Si(100) surface was less than 1 nm. As well as the Si(100) surface, the sputtered depth of the photo-resist surface increased with increase of the acceleration voltage for ethanol cluster ions. Based on these results, micro-patterning with various sizes in a range of 3 μm to 100 μm was performed on the Si(100) surfaces by the ethanol cluster ion irradiation. Various kinds of photo-resist mask patterns such as circle, square and line patterns were made on a Si(100) surface by photo-resist technique. The SEM observation showed that micro-patterns were prepared on the Si (100) surface by the ethanol cluster ion irradiation.

収録刊行物

• Surface and Coatings Technology

  Surface and Coatings Technology 206 (5), 869-873, 2011-11

  Elsevier B.V.

キーワード

• Ethanol cluster
• Ion beam
• Sputtering
• Surface modification
• Silicon
• Photo-resist film

詳細情報

• CRID: 1050845760653817472
• NII論文ID: 120003573885
• ISSN: 02578972
• HANDLE: 2433/151703
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles