Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition

• Akazawa, M.

• Nakano, T.

抄録

The valence band offset, ΔE_[V], at an Al2O3/In0.17Al0.83N interface formed by atomic layer deposition was measured by x-ray photoelectron spectroscopy. The conventional method of using the core level separation, ΔE_[CL], between O 1s and In 4d resulted in ΔE_[V] = 1.3 eV, which was apparently consistent with the direct observation of the valence band edge varying the photoelectron exit angle, θ. However, ΔE_[CL] and full width at half maximum of core-level spectra were dependent on θ, which indicated significant potential gradients in Al2O3 and InAlN layers. An actual ΔE_[V] of 1.2 eV was obtained considering the potential gradients.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 101 (12), 122110-, 2012-09-17

  American Institute of Physics

キーワード

• aluminium compounds
• atomic layer deposition
• core levels
• III-V semiconductors
• indium compounds
• valence bands
• wide band gap semiconductors
• X-ray photoelectron spectra

詳細情報

• CRID: 1050564288965418752
• NII論文ID: 120004883868
• HANDLE: 2115/50407
• ISSN: 00036951
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles