Single-crystalline 4H-SiC micro cantilevers with a high quality factor

• 足立, 亘平

• Watanabe, Naoki

• Okamoto, Hajime

• Yamaguchi, Hiroshi

• Kimoto, Tsunenobu

• Suda, Jun

抄録

Single-crystalline 4H-SiC micro cantilevers were fabricated by doping-type selective electrochemical etching of 4H-SiC. Using this method, n-type 4H-SiC cantilevers were fabricated on a p-type 4H-SiC substrate, and resonance characteristics of the fabricated 4H-SiC cantilevers were investigated under a vacuum condition. The resonant frequencies agreed very well with the results of numerical simulations. The maximum quality factor in first-mode resonance of the 4H-SiC cantilevers was 230, 000. This is 10 times higher than the quality factor of conventional 3C-SiC cantilevers fabricated on an Si substrate.

収録刊行物

• Sensors and Actuators A: Physical

  Sensors and Actuators A: Physical 197 122-125, 2013-08

  Elsevier B.V.

キーワード

• MEMS
• Single-crystalline 4H-SiC
• Cantilever
• Quality factor
• Resonator

詳細情報

• CRID: 1050845760699976704
• NII論文ID: 120005245141
• NII書誌ID: AA10781039
• ISSN: 09244247
• HANDLE: 2433/174329
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles