Evaluation of the Initial Stage of Formation of Ti/Al Ohmic Contacts Using Photoresponse Method

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  • Special Issue : Recent Advances in Nitride Semiconductors

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<jats:p> Ti/Al contacts formed on n-GaN and AlGaN/GaN layers upon annealing at temperatures below the melting point of Al were evaluated by photoresponse (PR), current–voltage (<jats:italic>I</jats:italic>–<jats:italic>V</jats:italic>), and secondary ion mass spectroscopy (SIMS) measurements. In the PR spectra, the photocurrent based on the internal photoemission was detected, and the Schottky barrier height (<jats:italic>q</jats:italic>φ<jats:sub>B</jats:sub>) was determined for all the samples, even though the <jats:italic>I</jats:italic>–<jats:italic>V</jats:italic> characteristics were very leaky. The AlGaN/GaN samples had constant <jats:italic>q</jats:italic>φ<jats:sub>B</jats:sub> values of 0.85–1.0 eV independent of the annealing temperature. In contrast, the n-GaN samples had very low <jats:italic>q</jats:italic>φ<jats:sub>B</jats:sub> values of 0.2 eV under the as-deposited condition. Upon annealing, <jats:italic>q</jats:italic>φ<jats:sub>B</jats:sub> significantly increases and finally reaches almost the same values as those of the AlGaN/GaN samples. This can be explained by the change from Ti- to Al-rich interfaces in conjunction with the SIMS results. </jats:p>

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