Thick (~1 mm) p-type In x Ga 1–x N(x ~ 0.36) grown by MOVPE at a low temperature (~570 8C)

• Yamamoto A.

• Hasan T. Md.

• Kodama K.

• Shigekawa N.

• Kuzuhara M.

抄録

This paper reports the post-growth annealing effects of low- temperature grown Mg-doped InGaN. By using MOVPE, 1 mm-thick Mg-doped In x Ga 1–x N (x ~ 0.36) flms are grown at 570 8C. In order to activate the Mg acceptors, grown samples are treated by the conventional furnace annealing (FA) or the rapid thermal annealing (RTA). In the case of the FA at 650 8C for 20 min, the InGaN flm is phase-separated. On the other hand, the RTA at a temperature higher than 700 8C enables us to get p-type samples. By using the RTA at 850 for 20 s, p-type samples with a hole concentration 10 18 –10 19 cm -3 are successfully obtained without phase separation.

収録刊行物

• Physica Status Solidi B

  Physica Status Solidi B 1-4, 2015-02-17

  WILEY-VCH

キーワード

• InGaN
• annealing
• doping
• MOVPE

詳細情報

• CRID: 1571980077594278528
• NII論文ID: 120005541052
• Web Site: http://hdl.handle.net/10098/8721
• 本文言語コード: en
• データソース種別:
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