Mgイオン注入によるGaNのp型層形成に関する研究

• 及川 拓弥

書誌事項

タイトル別名

• P-TYPE FORMATION OF GaN BY Mg-ION IMPLANTATION

抄録

type:Article

P-type conversion of n--GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor–acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics and UV and blue-green light emissions were observed at forward biased conditions for the first time. Van der Pauw measurements for the Mg-implanted GaN layers showed positive Hall coefficients.

収録刊行物

• 法政大学大学院紀要. 理工学・工学研究科編

  法政大学大学院紀要. 理工学・工学研究科編 56 1-4, 2015-03-24

  法政大学大学院理工学・工学研究科

キーワード

• GaN
• p-type
• Mg

詳細情報

• CRID: 1390009224830680192
• NII論文ID: 120005611545
• NII書誌ID: AA12677220
• ISSN: 21879923
• DOI: 10.15002/00011092
• Web Site: http://hdl.handle.net/10114/10392
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • IRDB
  • CiNii Articles