Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: a comparison with Schottky devices

• Le, Son Phuong

• Nguyen, Tuan Quy

• Shih, Hong-An

• Kudo, Masahiro

• Suzuki, Toshi-kazu

抄録

We have systematically investigated low-frequency noise (LFN) in AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) devices, where the AlN gate insulator layer was sputtering-deposited on the AlGaN surface, in comparison with LFN in AlGaN/GaN Schottky devices. By measuring LFN in ungated two-terminal devices and heterojunction field-effect transistors (HFETs), we extracted LFN characteristics in the intrinsic gated region of the HFETs. Although there is a bias regime of the Schottky-HFETs in which LFN is dominated by the gate leakage current, LFN in the MIS-HFETs is always dominated by only the channel current. Analyzing the channel-current-dominated LFN, we obtained Hooge parameters α for the gated region as a function of the sheet electron concentration n _s under the gate. In a regime of small n_s, both the MIS- and Schottky-HFETs exhibit α∝ns^<−1> . On the other hand, in a middle n_s regime of the MIS-HFETs, α decreases rapidly liken_s^<−ξ> with ξ ∼ 2-3, which is not observed for the Schottky-HFETs. In addition, we observe strong increase in α∝n_s^3 in a largen_ s regime for both the MIS- and Schottky-HFETs.

identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/12903

収録刊行物

• Journal of Applied Physics

  Journal of Applied Physics 116 (5), 54510-1-54510-8, 2014-08-07

  American Institute of Physics

詳細情報

• CRID: 1050845762468602496
• NII論文ID: 120005650340
• ISSN: 00218979
• Web Site: http://hdl.handle.net/10119/12903
• 本文言語コード: en
• 資料種別: journal article
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