Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

• Uchida, Takafumi

• Jo, Mingyu

• Tsurumaki-Fukuchi, Atsushi

• Arita, Masashi

• Fujiwara, Akira

• Takahashi, Yasuo

抄録

Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates. (C) 2015 Author(s).

収録刊行物

• AIP advances

  AIP advances 5 (11), 117144-1-117144-9, 2015-11

  American Institute of Physics (AIP)

詳細情報

• CRID: 1050001339019363584
• NII論文ID: 120005690894
• HANDLE: 2115/60524
• ISSN: 21583226
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles