Study on the Applications of Functionally-Developed Diamond-Like Carbon (DLC) Films “Heat resistant properties of Si-O-DLC and Si-N-DLC films"(Researches)

• Nutthanun, Moolsradoo

• Anak, Khantachawana

• Chavin, Jongwannnasiri

• Shuichi, Watanabe

• ナッタナン, ムルサラドゥ

• アナック, カンタチャワナ

• チャウイン, ジョンワンナシリ

• 渡部, 修一

書誌事項

タイトル別名

• 機能性DLC膜の応用に関する研究 “Si-O-DLCおよびSi-N-DLC膜の耐熱性"(学内特別研究)

抄録

In this article, the results obtained from a study carried out on the Si-O-DLC and Si-N-DLC films is reported. All the films were deposited using plasma-based ion implantation technique. The deposited films were annealed at 400°C and 650°C in an air atmosphere for 1 hour. The effects of adding silicon/oxygen and silicon/nitrogen into the DLC film on chemical composition and friction coefficient were investigated. The results indicate that all the films showed almost constant atomic contents of C, Si, O and N until annealing at 400°C. However, the films were completely destroyed at 650°C with the increased in Si and O contents, while the C content decreased. The Si-O-DLC and Si-N-DLC films exhibited lower values of friction coefficients than conventional DLC before and after annealing at 400°C, whereas all the films presented the same values of friction coefficients after annealing at 650°C due to the completely destroyed of the films. Furthermore, the Si-O-DLC film also exhibited lower value of friction coefficient than the Si-N-DLC film after annealing at 400°C. Thus, the Si-O-DLC film can be considered beneficial in improving the heat resistant properties

収録刊行物

• 日本工業大学研究報告 = Report of researches, Nippon Institute of Technology

  日本工業大学研究報告 = Report of researches, Nippon Institute of Technology 45 (4), 15-18, 2016-02

詳細情報

• CRID: 1050564287703025280
• NII論文ID: 120005721202
• ISSN: 21895449
• Web Site: https://mlib3.nit.ac.jp/webopac/TC00535300
• 本文言語コード: en
• 資料種別: departmental bulletin paper
• データソース種別:
  • IRDB
  • CiNii Articles