Wide-Supply-Range All-Digital Leakage Variation Sensor for On-Chip Process and Temperature Monitoring

• 石原, 亨

• 小野寺, 秀俊

• Ishihara, Tohru

• Onodera, Hidetoshi

抄録

Variation in process, voltage and temperature is a major obstacle in achieving energy-efficient operation of LSI. This paper proposes an all-digital on-chip circuit to monitor leakage current variations of both of the nMOSFET and pMOSFET independently. As leakage current is highly sensitive to threshold voltage and temperature, the circuit is suitable for tracking process and temperature variation. The circuit uses reconfigurable inhomogeneity to obtain statistical properties from a single monitor instance. A compact reconfigurable inverter topology is proposed to implement the monitor circuit. The compact and digital nature of the inverter enables cell-based design, which will reduce design costs. Measurement results from a 65 nm test chip show the validity of the proposed circuit. For a 124 sample size for both of the nMOSFET and pMOSFET, the monitor area is 4500 μm2 and active power consumption is 76 nW at 0.8 V operation. The proposed technique enables area-efficient and low-cost implementation thus can be used in product chips for applications such as dynamic energy and thermal management, testing and post-silicon tuning.

収録刊行物

• IEEE Journal of Solid-State Circuits

  IEEE Journal of Solid-State Circuits 50 2475-2490, 2015-11-01

  Institute of Electrical and Electronics Engineers Inc.

キーワード

• Leakage current
• MOSFET
• on-chip sensor
• process variation
• reconfigurable
• ring oscillator
• temperature

詳細情報

• CRID: 1050564285797103616
• NII論文ID: 120006027193
• ISSN: 00189200
• HANDLE: 2433/219559
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles