Ｚｎ３Ｉｎ２Ｏ６薄膜の蒸着と電気的性質

• 折笠 有基

  京都大学大学院人間･環境学研究科

• 林 直顕

  京都大学大学院人間･環境学研究科

• 村中 重利

  京都大学大学院人間･環境学研究科

書誌事項

タイトル別名

• Preparation and Electrical Properties of Zn3In2O6 Thin Films
• Zn3In2O6 ハクマク ノ ジョウチャク ト デンキテキ セイシツ

抄録

Using a Zn₃In₂O₆ target, zinc-indium oxide thin films were prepared by rf magnetron sputtering at different substrate temperatures. The influence of the substrate temperature on the structure, Zn: In ratio, and optical, electrical and thermoelectric properties were studied. C-axis oriented thin films were deposited. The ratio of zinc to indium decreased with increasing the substrate temperature. An average transmittance of about 80% in the visible range was obtained. Conductivity of the films increased with increasing the temperature. The Seebeck coefficient was largest for the films deposited at room temperature. The films deposited at 500°C showed the highest power factor of PF=8.21×10⁻⁵ (W/mK²).

収録刊行物

• 粉体および粉末冶金

  粉体および粉末冶金 54 (2), 121-125, 2007

  一般社団法人 粉体粉末冶金協会

キーワード

• zinc-indium oxide
• thin film
• thermoelectric material
• sputtering

詳細情報

• CRID: 1390282681283593600
• NII論文ID: 130000057963
• NII書誌ID: AN00222724
• DOI: 10.2497/jjspm.54.121
• COI: 1:CAS:528:DC%2BD2sXjt1CqtL0%3D
• ISSN: 18809014
• ISSN: 05328799
• NDL書誌ID: 8728005
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8728005
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可