Dual-Band CMOS Injection-Locked Frequency Divider with Variable Division Ratio
-
- JANG Sheng-Lyang
- Dept. of Electronic Engineering, National Taiwan University of Science and Technology
-
- LIN Chih-Yeh
- Dept. of Electronic Engineering, National Taiwan University of Science and Technology
-
- LIU Cheng-Chen
- Dept. of Electronic Engineering, National Taiwan University of Science and Technology
-
- HUANG Jhin-Fang
- Dept. of Electronic Engineering, National Taiwan University of Science and Technology
Search this article
Abstract
A dual band 0.18µm CMOS LC-tank injection locked frequency divider (ILFD) is proposed. The ILFD circuit is realized with a cross-coupled pMOS LC-tank oscillator with an inductor switch for frequency band selection. The self-oscillating VCO is injection-locked by nth-harmonic input to obtain the division factor of n. The division ratio of 1, 2, and 3 has been found for the proposed ILFD. Measurement results show that at the supply voltage of 1.1V, the free-running frequency is from 2.28(3.09)GHz to 2.78(3.72)GHz for the low- (high-) frequency band. The power consumption of the ILFD core is 3.7mW (6.2mW) at low (high) band. The total area including the output buffer and the pads is 0.841 × 0.764mm2.
Journal
-
- IEICE Transactions on Electronics
-
IEICE Transactions on Electronics E92-C (4), 550-557, 2009
The Institute of Electronics, Information and Communication Engineers
- Tweet
Details 詳細情報について
-
- CRID
- 1390001204374642176
-
- NII Article ID
- 10026821767
-
- NII Book ID
- AA10826283
-
- ISSN
- 17451353
- 09168524
-
- Text Lang
- en
-
- Data Source
-
- JaLC
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed