Optical Activation of Er<SUP>3+</SUP> Implanted in Silicon by Oxygen Impurities

• Favennec P. N.

  Center National d'Etudes des Télécommunications LAB/OCM

• L'Haridon H.

  Center National d'Etudes des Télécommunications LAB/OCM

• Moutonnet D.

  Center National d'Etudes des Télécommunications LAB/OCM

• Salvi M.

  Center National d'Etudes des Télécommunications LAB/OCM

• Gauneau M.

  Center National d'Etudes des Télécommunications LAB/OCM

抄録

Luminescence spectra and SIMS measurements of Er-doped silicon are presented in this paper. Luminescence was found to be stronger in Czochralski-grown Si crystals, known to contain up to 10¹⁸ cm⁻³ of oxygen center. Direct role played by oxygen impurities in the optical activation of the 1.54 μm luminescence was demonstrated by implanting oxygen into Er implanted layers in silicon at concentrations comparable to those of Er. Possible mechanisms of enhancement of photoluminescence are discussed.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 29 (4), L524-L526, 1990

  公益社団法人 応用物理学会

キーワード

• implantation
• silicon
• rare earth
• erbium
• oxygen
• photoluminescence

詳細情報

• CRID: 1573668927941665408
• NII論文ID: 130003402336
• ISSN: 00214922
• Web Site: https://jlc.jst.go.jp/DN/JALC/00337537644?from=CiNii
• 本文言語コード: en
• データソース種別:
  • CiNii Articles