Metalorganic Vapor Phase Epitaxial Growth for High Electron Mobility Transistor LSIs

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Abstract

We report on metalorganic vapor phase epitaxy (MOVPE) for high electron mobility transistor (HEMT) LSI. It is shown that the layers grown by a low-pressure barrel reactor with a large-area growth capacity (twelve 3-inch wafers) have an excellent reproducibility both for thickness and donor concentration with nearly ±1%. We applied MOVPE-grown wafers to fabricate a HEMT 64 kb SRAM with 0.6 μm gates and obtained a typical address access time of 1.2 ns at a power dissipation of 5.9 W.

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