Growth of Oriented Si Film on Quartz from Si<SUB>3</SUB>H<SUB>8</SUB> by Thermal and Photo-CVD Using a D<SUB>2</SUB> Lamp

• Okuyama Masanori

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

• Fujiki Noriaki

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

• Inoue Kohji

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

• Hamakawa Yoshihiro

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

抄録

Polycrystalline Si films have been grown on fused quartz plates at 500–650°C from Si₃H₈ by thermal CVD and photo-CVD using a D₂ lamp. The thermal and photo-CVD films prepared above 575°C are highly ⟨100⟩-oriented but the films at 545 and 560°C are ⟨110⟩-oriented. This tendency is more remarkable in the photo-CVD than in the thermal CVD. These orientations change little in depth, but the orientation horizontal to the film plane is random.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 27 (4), L499-L501, 1988

  公益社団法人 応用物理学会

キーワード

• crystal growth
• Si
• thin film
• Si<SUB>3</SUB>H<SUB>8</SUB>
• CVD
• photo-CVD
• D<SUB>2</SUB> lamp
• polycrystal
• pole figure measurement

詳細情報

• CRID: 1572543027983659520
• NII論文ID: 130003468250
• ISSN: 00214922
• Web Site: https://jlc.jst.go.jp/DN/JALC/00337519459?from=CiNii
• 本文言語コード: en
• データソース種別:
  • CiNii Articles