Asymmetric Implantation Self-alignment Technique for GaAs MESFETs
-
- Kimura Tamotsu
- R & D Group, Oki Electric Industry Co. Ltd.
-
- Inokuchi Kazuyuki
- R & D Group, Oki Electric Industry Co. Ltd.
-
- Akiyama Masahiro
- R & D Group, Oki Electric Industry Co. Ltd.
-
- Sakuta Masaaki
- R & D Group, Oki Electric Industry Co. Ltd.
抄録
A novel self-alignment technique, the asymmetric implantation self-alignment technique (ASIST), has been developed for GaAs MESFETs. This technique is based on the selective self-alignment ion implantation which provides an asymmetric n+ profile for the source and drain regions. By ASIST, the GaAs MESFET has been fabricated with the heavily doped source and the lightly doped drain and it is demonstrated for the first time that this structure is quite effective in suppressing the short-channel effect without increasing the source resistance. In this letter, the process and device characteristics of the ASIST-FET are described.
収録刊行物
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 27 (7), L1340-L1343, 1988
公益社団法人 応用物理学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1573387452913192832
-
- NII論文ID
- 130003468367
-
- ISSN
- 00214922
-
- 本文言語コード
- en
-
- データソース種別
-
- CiNii Articles