High-Speed Intensity Modulation by Quantum-Confined Field Effect Combined with Modulation of Injection Current in Light-Emitting Triodes

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A combination of the quantum-confined field effect with the modulation of current injection is, for the first time, demonstrated to result in high-speed switching of emission intensity in AlGaAs light-emitting triodes at room temperature. The switching scheme does not reply on changes in carrier population at all but purely on effects of the electric field on oscillator strength in the quantum well active layer of the device, in marked contrast to the modulation scheme in conventional light-emitting diodes. The response time of the luminescence intensity for a pulsed input voltage is observed to be completely free from recombination lifetime limitation. It is shown that the high-speed capability inherent in the field effect is not degraded by the modulation of current injection and that three-terminal operation is essential for the high-speed switching.

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