Diagnostics of Hydrogen Role in the Si Surface Reaction Processes Employing In-situ Fourier Transform Infrared-Attenuated Total Reflection
-
- Kawamura Kohei
- Faculty of Engineering, Hiroshima University
-
- Ishizuka Shuichi
- Faculty of Engineering, Hiroshima University
-
- Sakaue Hiroyuki
- Faculty of Engineering, Hiroshima University
-
- Horiike Yasuhiro
- Faculty of Engineering, Hiroshima University
抄録
The oxidation process of H-terminated amorphous Si film on Ge and the reaction mechanism of the triethylsilane (TES)/H system which allows us to deposit an organic Si film conformably have been investigated employing in-situ FTIR(Fourier transform infra red)-ATR(attenuated total reflection). This measurement was demonstrated to be a sensitive and simple method to inspect the role of H(hydrogen) in their surface reactions. In the Si oxidation case, the H-terminated Si is readily oxidized by O(oxygen) atoms. The oxidation with O2 molecules proceeds gradually as the breaking of Si–H bonds and forming of H–Si–O bonds due to binding of O atoms with the back bond of Si for 700 min. After about 700 min, dissociated O atoms rapidly penetrate the Si film, and oxidize the bulk Si, leaving both Si–H and H–Si–O bonds still on the Si surface. Next, in the TES/H reaction system, gas phase FTIR spectra obtained by reactions of H atoms or H2 molecules with TES do not show appreciable change in a wide range of pressure. Nevertheless, in-situ FTIR-ATR reveals that TES reacts easily with H atoms on the surface, desorbing H2, methyl and ethyl groups.
収録刊行物
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 30 (11), 3215-3218, 1991
公益社団法人 応用物理学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1570291228237845760
-
- NII論文ID
- 130003470761
-
- ISSN
- 00214922
-
- 本文言語コード
- en
-
- データソース種別
-
- CiNii Articles