The Effects of Thermal Cyclic Annealing in Copper Single Crystals

  • Hasegawa Tadashi
    Department of Materials Science, Faculty of Engineering, Tohoku University
  • Ishii Yoshitomo
    Department of Materials Science, Faculty of Engineering, Tohoku University
  • Karashima Seiichi
    Department of Materials Science, Faculty of Engineering, Tohoku University

Abstract

Copper single crystals grown in vacuum (10−4∼10−5mm Hg) by the Bridgman method were subjected to the following three kinds of annealing treatments in vacuum (∼2×10−5mm Hg): (1) thermal cyclic annealing using a moving furnace, (2) thermal cyclic annealing using a fixed furnace, and (3) isothermal annealing. Changes in the dislocation distribution, the dislocation density, and the length of sub-boundaries per unit area with annealing time or annealing cycle were examined by means of the etch-pit technique.<BR>Thermal cyclic annealing was much more effective than isothermal annealing in reducing the dislocation density and the length of sub-boundaries. Little differences were observed between thermal cyclic annealings using a moving furnace and a fixed furnace. Thermal cyclic annealing was more effective in crystals with large subgrains than in crystals with small subgrains.<BR>In crystals with subgrains larger than a few millimetres, the dislocation density of the order of 105/cm2 was reduced to ∼2×103/cm2 by thermal cyclic annealing for about 100 hr with a period of 15 or 30 min.

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