Effect of Compressive Stress on Reaction-Diffusion in the Cu–Si System

• Onishi Masami

  Department of Metallurgy, The Kyushu Institute of Technology

• Miura Hirofumi

  Graduate School, The Kyushu Institute of Technology

書誌事項

タイトル別名

• Effect of Compressive Stress on Reaction-Diffusion in the Cu–Si System

抄録

Cu–Si diffusion couples were annealed at temperatures from 411 to 461°C under various compressive stresses less than 120 kg/cm². Regardless of the magnitude of the stress the Cu₃Si phase appeared as an only one intermetallic phase in a diffusion zone. Marker experiments showed that copper was the diffusing element. Under the stresses above 80 kg/cm² the growth of the Cu₃Si followed a parabolic law at intrinsic rate at a given temperature. Under the stresses less than 80 kg/cm² the growth rate of the phase in an early stage of anneal was lower than the intrinsic rate. In the subsequent anneal stage, however, the growth rate tended to be accelerated and approach the intrinsic one. Such growth behaviour of the Cu₃Si phase appeared to be explained in terms of the quantitative variation of Kirkendall voids which restricted the transfer of atoms from the copper into the diffusion zone.

収録刊行物

• Transactions of the Japan Institute of Metals

  Transactions of the Japan Institute of Metals 18 (2), 107-112, 1977

  社団法人 日本金属学会

キーワード

• General Engineering

詳細情報

• CRID: 1390282680095090048
• NII論文ID: 130003485556
• DOI: 10.2320/matertrans1960.18.107
• COI: 1:CAS:528:DyaE2sXktV2rtL8%3D
• ISSN: 24324701
• ISSN: 00214434
• Web Site: https://www.jstage.jst.go.jp/article/matertrans1960/18/2/18_2_107/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可