The Grain Growth after Light Cold Rolling in Grain-Oriented Silicon-Iron Sheets

• Nakae Hitoshi

  Tsurumi Research Laboratory, Tokyo-Shibaura Electric Co. Ltd.

抄録

The grain growth after light rolling below 10% in grain-oriented silicon-iron sheets containing 3.50 and 1.43% Si was studied optically and magnetically in order to obtain fundamental data for the establishment of a strain-annealing procedure as a modification of the Goss process. It has been found that, in initially fine-grained sheet specimens, the grain growth increases more prominently at two reduction rates, namely, at 0.5 to 2% and 6 to 7%. Their resulting preferred orientations are different; in the former, a marked development of the Goss texture occurred, possibly involving no primary recrystallization, while in the latter recrystallization from the Goss texture also occurred.<BR>The recrystalization from the Goss texture occurred also on initially coarse-grained specimens. It has been found that the optimum point for producing silicon-iron sheets with high permeability and low hysteresis loss is at the first grain growth maximum of 2% reduction for initially fine-grained sheet specimens.

収録刊行物

• Transactions of the Japan Institute of Metals

  Transactions of the Japan Institute of Metals 2 (4), 213-217, 1961

  社団法人 日本金属学会

キーワード

• General Engineering

詳細情報

• CRID: 1390001205118959744
• NII論文ID: 130003485704
• DOI: 10.2320/matertrans1960.2.213
• ISSN: 24324701
• ISSN: 00214434
• Web Site: https://www.jstage.jst.go.jp/article/matertrans1960/2/4/2_4_213/_pdf
• 本文言語コード: en
• データソース種別:
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• 抄録ライセンスフラグ: 使用不可