Change in Film Stress of a-Si:H by Annealing

• Ito Taichiro

  Department of Metallurgical Engineering, College of Engineering, University of Osaka Prefecture

• Fujimura Norifumi

  Graduate Student, University of Osaka Prefecture

• Nakayama Yutaka

  Department of Metallurgical Engineering, College of Engineering, University of Osaka Prefecture

収録刊行物

• Transactions of the Japan Institute of Metals

  Transactions of the Japan Institute of Metals 27 (10), 789-790, 1986

  社団法人 日本金属学会

キーワード

• amorphous silicon
• a-Si:H
• film stress
• intrinsic stress
• hydrogen evolution
• annealing
• activation energy

詳細情報

• CRID: 1390001205118333184
• NII論文ID: 130003486258
• DOI: 10.2320/matertrans1960.27.789
• COI: 1:CAS:528:DyaL2sXitlGhsw%3D%3D
• ISSN: 24324701
• ISSN: 00214434
• Web Site: https://www.jstage.jst.go.jp/article/matertrans1960/27/10/27_10_789/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles