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- KAMEYAMA MASAOMI
- NIKON Corporation Industrial Optics Dept.
抄録
To investigate the way to achieve 250nm photolithography, aerial image simulations are performed. Simulation results show that expected depth of focus will be very shallow even using KrF(248nm) wavelength with conventional illumination system. To enlarge the depth of focus, progress of resist performances, resolution enhancement technologies and mask biases are required. In this paper, we will outline the importance of resist performance and mask bias, and explain the influence of Resolution Enhencement Technologies.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 6 (4), 629-636, 1993
フォトポリマー学会
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詳細情報 詳細情報について
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- CRID
- 1390001204324892672
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- NII論文ID
- 130003488801
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- COI
- 1:CAS:528:DyaK2cXitlWlu7k%3D
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- ISSN
- 13496336
- 09149244
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可