Localized Orbital Approach to Electronic Structure of Covalent Semiconductors. II. The Impurity States in Silicon

• Hosono Toshiharu

  Department of Physics, Osaka University

• Suzuki Katuhisa

  Department of Physics, Osaka University

抄録

The impurity states in Si are investigated theoretically on the basis of a previously proposed formalism, which emphasizes the local environment around the impurity center. The impurity potential is made self-consistent in a finite region surrounding the impurity atom. The difference of substitutional Ga (shallow) and Zn (deep) impurities is discussed from a chemical viewpoint based on atomic properties. The electronic structures of interstitial 3d transition metal impurities Cr, Mn and Fe are calculated for the first time. The obtained result can be interpreted in terms of the difference in chemical bonding between the substitutional and interstitial cases.

収録刊行物

• Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ

  Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ 48 (6), 2031-2039, 1980

  一般社団法人 日本物理学会

キーワード

• General Physics and Astronomy

詳細情報

• CRID: 1390001204182949376
• NII論文ID: 210000088564
• NII論文ID: 130003738064
• DOI: 10.1143/jpsj.48.2031
• BIBCODE: 1980JPSJ...48.2031H
• COI: 1:CAS:528:DyaL3cXkvVKrsLo%3D
• ISSN: 13474073
• ISSN: 00319015
• Web Site: https://journals.jps.jp/doi/pdf/10.1143/JPSJ.48.2031
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可