活性金属ろうによる炭化ケイ素セラミックスの接合　第２報

• 岡村 久宣

  日立製作所日立研究所

• 坂本 征彦

  日立製作所日立研究所

• 志田 朝彦

  日立製作所日立研究所

書誌事項

タイトル別名

• Bonding of silicon carbide ceramics by using active brazing metal (No.2).

抄録

A bonding method in which the barrier layer was formed on the bonding surface of hot press sintered SiC ceramics (BeO or AlN as sintering additives) prior to active brazing metal (Ti-AgCu) was investigated in order to improve the bonding strength of SiC ceramics joints. In this report the material for the barrier layer and its effect were investigated.<BR>The results of this study are as follows:<BR>(1) The layer of reaction products between Cr powder and SiC ceramics as a barrier layer is effective to improve the bonding strength.<BR>(2) The four point bending strength of the SiC joints by Ti-AgCu brazing metal with the Cr barrier laver of about 1.4μm in thickness on SiC was improved by the factor 3 to 5, as compared with the joints without Cr barrier layer. Then fracture position was in the SiC substrate. It is considered that Ag₂Si, Ti₅Si₄, etc. which were assumed to be the cause for low bonding strength in the previous report were not formed in the bonding layer.

収録刊行物

• 溶接学会論文集

  溶接学会論文集 8 (2), 279-286, 1990

  一般社団法人 溶接学会

キーワード

• SiC ceramics
• Active brazing metal
• Cr barrier layer
• Silver brazing metal

詳細情報

• CRID: 1390282679699819136
• NII論文ID: 130003764889
• DOI: 10.2207/qjjws.8.279
• ISSN: 24348252
• ISSN: 02884771
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可