高速度トランジスタ・チョッパ

• 長谷川 賢一

  東京大学工学部応用物理学科

• 西野 治

  東京大学工学部応用物理学科

書誌事項

タイトル別名

• High Speed Transistor Chopper-type Amplifier

抄録

Discussed in this paper are several properties of a transistor chopper operating with high keying frequency above 10kc. A spurious output of the chopper that causes a drift contains two spikes induced by rise and fall of the keying signal. They limit the use of higher keying frequency. A new driving method as shown in Fig. 10 has been devised to decrease these spikes. In this method, Zener diode used as a limiter is effective. A difference is found between "off" and "on" durations when the transistor is switched by rectangular wave. The difference that is produced by minority carrier storage lowers the input resistance of a balanced type chopper. Of the amplifier with keying signal of 16kc, the minimum detectable power is 4×10^-18 W and the drift voltage is less than ±20 μV within the range between 15°C and 55°C.

収録刊行物

• 計測

  計測 9 (2), 80-87, 1959

  公益社団法人 計測自動制御学会

詳細情報

• CRID: 1390282680098977024
• NII論文ID: 130003765239
• DOI: 10.11499/sicejl1951.9.80
• ISSN: 18838154
• ISSN: 04500024
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可