書誌事項
- タイトル別名
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- Analysis of the Nonlinear Characteristics of a Semiconductor Pressure Sensor
- ハンドウタイ アツリョク センサ ノ ヒセンケイ トクセイ ノ カイセキ
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In this paper a method of analyzing the nonlinear characteristics of a piezoresistive semiconductor pressure sensor and the results given by this method are described.<br>The main causes of nonlinearity in a semiconductor pressure sensor are the nonlinear characteristics of the piezoresistive effect in silicon and of the stress in the silicon diaphragm. Experimental data are used to derive a nonlinear characteristics formula and then the formula is used to estimate the nonlinearity of the piezoresistive effect. Approximate formulas for uniformly loaded circular plates with a large deflection are also used to calculate the nonlinearity of the stress in a silicon diaphragm.<br>Using these formulas, it is shown that the nonlinearity error of a pressure sensor is related to the positions of radial and tangential resistors on the silicon diaphragm. Optimum resistor positions, in which nonlinearities are less than 0.2% F. S., have also been determined.
収録刊行物
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- 計測自動制御学会論文集
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計測自動制御学会論文集 17 (2), 274-279, 1981
公益社団法人 計測自動制御学会
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詳細情報 詳細情報について
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- CRID
- 1390282679480322688
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- NII論文ID
- 130003789544
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- NII書誌ID
- AN00072392
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- ISSN
- 18838189
- 04534654
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- NDL書誌ID
- 2311262
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- データソース種別
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- JaLC
- NDL
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