Variation of the Yield of Photoelectrons Emitted from a Silicon Single Crystal under the Asymmetric Diffraction Condition of X-Rays

• Takahashi Toshio

  Institute of Industrial Science, University of Tokyo

• Kikuta Seishi

  Institute of Industrial Science, University of Tokyo

書誌事項

タイトル別名

• Variation of the Yield of Photoelectron

抄録

Variations of the yield of silicon K-photoelectrons are observed under two asymmetric diffraction conditions with the asymmetry factors of b and 1/b. The 220 Bragg-case diffractions of silicon are used for Cu Kα radiation in the double-crystal arrangements. Anomalous changes found in two cases show a great difference, which is explained by the fact that the wave fields formed in the crystal in two cases are different from each other. The wave fields formed near the crystal surface are discussed in detail. The observed curves agree fairly well with the calculated ones.

収録刊行物

• Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ

  Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ 46 (5), 1608-1615, 1979

  一般社団法人 日本物理学会

キーワード

• General Physics and Astronomy

詳細情報

• CRID: 1390001204190519040
• NII論文ID: 210000087813
• NII論文ID: 110001975578
• NII論文ID: 130003895899
• NII書誌ID: AA00704814
• DOI: 10.1143/jpsj.46.1608
• BIBCODE: 1979JPSJ...46.1608T
• COI: 1:CAS:528:DyaE1MXksVOktr8%3D
• ISSN: 13474073
• ISSN: 00319015
• NDL書誌ID: 2050838
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I2050838
• Web Site: https://journals.jps.jp/doi/pdf/10.1143/JPSJ.46.1608
• 本文言語コード: en
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