Electronic Properties of a Semiconductor Superlattice. I. Self-Consistent Calculation of Subband Structure and Optical Spectra

• Ando Tsuneya

  Institute of Applied Physics, University of Tsukuba

• Mori Shojiro

  Department of Physics, University of Tokyo

抄録

The subband structure of a heavily doped n-type GaAs–Ga_1−xAl_xAs superlattice is calculated. A band bending effect caused by charge transfer from the Ga_1−xAl_xAs to GaAs layers is taken into account self-consistently in the Hartree approximation. When the wavefunction along the superlattice direction is rather localized, the band bending effect is crucial especially in the case of modulation doping where only the Ga_1−xAl_xAs layer is heavily doped and the GaAs layer remains undoped. Calculated results are in good agreement with recent experiments. Many-body effects such as exchange and correlation are studied in the density-functional formulation, but shown to be unimportant. Intersubband optical absorptions are also investigated. A local field effect can shift resonance energies to higher energy side considerably.

収録刊行物

• Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ

  Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ 47 (5), 1518-1527, 1979

  一般社団法人 日本物理学会

キーワード

• General Physics and Astronomy

詳細情報

• CRID: 1390001204182778368
• NII論文ID: 210000088137
• NII論文ID: 130003896165
• DOI: 10.1143/jpsj.47.1518
• BIBCODE: 1979JPSJ...47.1518A
• COI: 1:CAS:528:DyaL3cXivVyqtQ%3D%3D
• ISSN: 13474073
• ISSN: 00319015
• Web Site: https://journals.jps.jp/doi/pdf/10.1143/JPSJ.47.1518
• 本文言語コード: en
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