Raman Scattering of Trigonal Se and Te at Very High Pressure
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- Aoki Katsutoshi
- The Institute for Solid State Physics, The University of Tokyo
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- Shimomura Osamu
- The Institute for Solid State Physics, The University of Tokyo
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- Minomura Shigeru
- The Institute for Solid State Physics, The University of Tokyo
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- Koshizuka Naoki
- Electrotechnical Laboratory
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- Tsushima Tachiro
- Electrotechnical Laboratory
書誌事項
- タイトル別名
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- Raman Scattering of Trigonal Se and Te
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The first-order Raman spectra of trigonal Se and Te have been measured under pressure up to the semiconductor-metal transition points at room temperature. In both materials, a prominent pressure effect is found as an anomalous shift of the A1 mode to low frequency. This softening indicates interference of the interchain bonding with the intrachain covalent bond. Frequency shifts with pressure show deviations from the lattice dynamical homology of Se and Te. The results are interpreted as aspects of the transition to the puckered layer structure of the high-pressure monoclinic phase of Te.
収録刊行物
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 48 (3), 906-911, 1980
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390282679160937984
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- NII論文ID
- 210000088722
- 110001964833
- 130003896295
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1980JPSJ...48..906A
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- COI
- 1:CAS:528:DyaL3cXitVKgurk%3D
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 2171617
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可