Electrical Properties of Semiconducting Liquid Te with Transition Metal Solutes

• Ohno Satoru

  Niigata College of Pharmacy

• Harada Shuzi

  Department of Physics, Faculty of Science, Niigata University

書誌事項

タイトル別名

• Electrical Properties of Semiconducting

抄録

The effect of localized d electrons in liquid Te has been examined. The change of electrical resistivity by addition of solute into liquid Te is positive for the “less than half” transition metal solutes and is negative for the “more than half” ones. The additional resistivity is sufficiently explained from the effects due to the s-d resonant scattering and the change of density of states at the Fermi level. This pattern of additional resistivities in the series of transition metal solutes agrees roughly with a sine function of the number of the localized d electrons.

収録刊行物

• Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ

  Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ 49 (1), 189-193, 1980

  一般社団法人 日本物理学会

キーワード

• General Physics and Astronomy

詳細情報

• CRID: 1390282679161419392
• NII論文ID: 110001965069
• NII論文ID: 130003896458
• NII論文ID: 210000088891
• NII書誌ID: AA00704814
• DOI: 10.1143/jpsj.49.189
• BIBCODE: 1980JPSJ...49..189O
• COI: 1:CAS:528:DyaL3cXlt1Cisbo%3D
• ISSN: 13474073
• ISSN: 00319015
• NDL書誌ID: 2185280
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I2185280
• Web Site: https://journals.jps.jp/doi/pdf/10.1143/JPSJ.49.189
• 本文言語コード: en
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