Annealing Kinetics of Vacancies in Aluminum Single Crystals with Low Dislocation Density
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- Hashimoto Eiji
- Laboratory of Crystal Physics, Faculty of Science, Hiroshima University
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- Murakami Yuichi
- Laboratory of Crystal Physics, Faculty of Science, Hiroshima University
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- Kino Takao
- Laboratory of Crystal Physics, Faculty of Science, Hiroshima University
書誌事項
- タイトル別名
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- Annealing Kinetics of Vacancies in Alum
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Supersaturated vacancies were introduced in high purity aluminum single crystals with comparatively low dislocation densities by air-cooling from temperatures between 300°C and 400°C, and their decays during aging at 50°C were studied by means of the electrical resistance measurement. The S-shaped decay profile was observed clearly when the initial concentration of vacancies is low. The profile was explained by the clustering of vacancies, and the process is describable by a model which takes into account the association and dissociation of small vacancy clusters containing vacancies less than ten and their growth to larger clusters.
収録刊行物
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 49 (3), 1123-1129, 1980
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390001204185139200
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- NII論文ID
- 110001965220
- 130003896550
- 210000088756
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1980JPSJ...49.1123H
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- COI
- 1:CAS:528:DyaL3cXlvFGksro%3D
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 2190981
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可