Ａｌ‐Ｍｇ合金の低温時効

• 長村 光造

  京都大学工学部

• 小倉 哲造

  京都大学大学院

• 村上 陽太郎

  京都大学工学部

書誌事項

タイトル別名

• Aging Behavior of Al-Mg alloys at Low Temperature
• Al Mg ゴウキン ノ テイオン ジコウ

抄録

The electrical resistivity measurement and transmission electron microscopy were performed on the binary alloys containing Mg 5 to 15at%. The electrical resistivity of the quenched alloys is well expressed as ρ=2.37+5.3C(100-C)•10^-2nΩm. The change of electrical resistivity during isothermal aging at temperatures up to 453K can be explained by a complex growth process of GP zones and dislocation loops. The resistivity gradually lowers during aging at temperatures above 300K where well developed dislocation loops are observed by TEM. This is attributed to solute dilution in the matrix. The resistivity apparently rises during aging at temperatures below 300K relating to the growth of GP zones. A reversion phenomenon is observed for those GP zones. A metastable phase diagram for GP zones in Al-Mg binary system is proposed.

収録刊行物

• 軽金属

  軽金属 31 (7), 484-490, 1981

  一般社団法人 軽金属学会

キーワード

• Materials Chemistry
• Metals and Alloys
• Mechanical Engineering
• Mechanics of Materials

詳細情報

• CRID: 1390282681313643136
• NII論文ID: 130004075633
• NII論文ID: 10003033333
• NII書誌ID: AN00069773
• DOI: 10.2464/jilm.31.484
• COI: 1:CAS:528:DyaL38XitVers7k%3D
• ISSN: 18808018
• ISSN: 04515994
• ISSN: http://id.crossref.org/issn/04515994
• NDL書誌ID: 2319869
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I2319869
• 本文言語コード: ja
• データソース種別:
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