Microstructure and Dielectric Properties of Barium Titanate Film Prepared by MOCVD
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- Tohma Tetsuro
- Institute for Materials Research, Tohoku University
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- Masumoto Hiroshi
- Institute for Materials Research, Tohoku University
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- Goto Takashi
- Institute for Materials Research, Tohoku University
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抄録
Barium titanate (BaTiO3) films were prepared on (100)Pt/(100)MgO substrates by metal-organic chemical vapor deposition (MOCVD). The effects of deposition temperature (Tdep) and O2 partial pressure (PO<SUB>2</SUB>) on the microstructure and dielectric properties of the films were investigated. The BaTiO3 films prepared at Tdep=873 K showed a randomly orientated granular structure, while those prepared at Tdep=973 K showed a significant (001) orientation with a columnar structure. The grain size was strongly affected by PO<SUB>2</SUB> and showed the maximum at PO<SUB>2</SUB>=66 to 93 Pa. The dielectric constant increased from 93 to 640 with increasing grain size from 20 to 130 nm, showing a broad peak at 350 to 380 K.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 43 (11), 2880-2884, 2002
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390001204246312576
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- NII論文ID
- 130004451738
- 10012328339
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- NII書誌ID
- AA1151294X
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- COI
- 1:CAS:528:DC%2BD3sXjtFKh
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 6367579
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可