Formation of Fe3O4/GaAs Heterostructure via Surface Oxidation of GaAs Substrate

• Sakuma H.

  Department of Electrical and Electronic Systems Engineering, Faculty of Engineering, Utsunomiya University

• Shidara Y.

  Department of Electrical and Electronic Systems Engineering, Faculty of Engineering, Utsunomiya University

• Kagi Y.

  Department of Electrical and Electronic Systems Engineering, Faculty of Engineering, Utsunomiya University

• Suzuki R.

  Department of Electrical and Electronic Systems Engineering, Faculty of Engineering, Utsunomiya University

• Ishii K.

  Department of Electrical and Electronic Systems Engineering, Faculty of Engineering, Utsunomiya University

書誌事項

タイトル別名

• Formation of Fe₃O₄/GaAs Heterostructure via Surface Oxidation of GaAs Substrate

抄録

In our previous study, we found that magnetite is epitaxially grown on GaAs substrate pre-annealed in air. While the formation of an oxidized layer is confirmed on GaAs by electron microscopy, the composition and crystal structure was unknown. In this study, the oxidized layer is revealed to be β-G_a2O₃, of which (100) plane is parallel to the substrate plane by x-ray and electron diffractions. It disappears during the sputter deposition of magnetite on it, and a clear Fe₃O₄/GaAs interface is formed. The epitaxial relationship of the Fe₃O₄/GaAs heterostructure is cube-on-cube in contrast to that fabricated by a conventional method.

収録刊行物

• 粉体および粉末冶金

  粉体および粉末冶金 61 (S1), S311-S313, 2014

  一般社団法人 粉体粉末冶金協会

キーワード

• magnetite
• GaAs
• epitaxial growth
• X-ray diffraction
• transmission electron microscopy

詳細情報

• CRID: 1390282681287487744
• NII論文ID: 130004482699
• DOI: 10.2497/jjspm.61.s311
• ISSN: 18809014
• ISSN: 05328799
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• 抄録ライセンスフラグ: 使用不可