ＭｇＯ（００１）トンネル障壁のトンネル磁気抵抗効果と界面状態

• 湯浅 新治

  産業技術総合研究所

• 片山 利一

  産業技術総合研究所

書誌事項

タイトル別名

• Tunneling Magnetoresistance and Interface Structure of Magnetic Tunnel Junctions with a MgO (001) Barrier

抄録

Magnetic tunnel junctions (MTJs) consisting of two ferromagnetic electrode layers separated by a crystalline MgO(001) tunneling barrier exhibit a giant tunneling magnetoresistance (TMR) effect at room temperature. The effect is a key for the development of next-generation spintronic devices such as magnetoresistive random access memory (MRAM) and ultrahigh-density hard disk drives. First-principle theories predicted that no oxidation of magnetic atoms at the barrier/electrode interfaces is essential for the giant TMR effect. Wehave fabricated fully epitaxial MTJs such as Fe(001)/MgO(001)/Fe(001) using MBE technique and achieved huge magnetoresistance ratios above 400% at room temperature, the highest value reported so far. We investigated the interface structure using x-ray absorption spectroscopy (XAS), and x-ray magnetic circular dichroism (XMCD), and confirmed that the interface Fe atoms are not oxidized and have an enhanced magnetic moment although they are neighboring the O atoms of MgO.

収録刊行物

• 表面科学

  表面科学 28 (1), 15-21, 2007

  公益社団法人 日本表面科学会

キーワード

• General Computer Science

詳細情報

• CRID: 1390282681434899840
• NII論文ID: 130004486350
• DOI: 10.1380/jsssj.28.15
• COI: 1:CAS:528:DC%2BD2sXjtlyntLY%3D
• ISSN: 18814743
• ISSN: 03885321
• Web Site: http://www.jstage.jst.go.jp/article/jsssj/28/1/28_1_15/_pdf
• 本文言語コード: ja
• データソース種別:
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• 抄録ライセンスフラグ: 使用不可