Pattern Generation below 0.1 micron by Localized Chemical Vapor Deposition with the Scanning Tunneling Microscope.

• Lozanne Alex de

  Department of Physics, University of Texas, Austin, TX 78712–1081, USA

抄録

Nowadays there are many techniques for nanofabrication, some of which are well established. The scanning tunneling microscope (STM) is the newest tool for making nanostructures, even down to the atomic scale, but it is not yet clear which applications will benefit from it. We have developed a technique that combines STM and chemical vapor deposition (CVD): the idea is to break CVD precursor gases with the electrons from the STM. This has the attractive feature of obtaining the highest resolution possible together with minimal damage to the substrate or existing structures. The gases that have been used with this technique include trimethylaluminum, dimethylcadmium, tungsten hexafluoride, nickel tetracarbonyl, and iron pentacarbonyl. Thus far this technique has produced metallic lines that are only 35 nm wide and dots that are 8 nm in diameter.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 33 (12B), 7090-7093, 1994

  The Japan Society of Applied Physics

キーワード

• scanning tunneling microscope
• chemical vapor deposition
• direct writing
• nanostructure
• maskless patterning

詳細情報

• CRID: 1390282681221937792
• NII論文ID: 110003946659
• NII論文ID: 210000036365
• NII論文ID: 130004519672
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.33.7090
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.33.7090
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.33.7090/pdf
• 本文言語コード: en
• データソース種別:
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• 抄録ライセンスフラグ: 使用不可