Atomic Hydrogen-Assisted GaAs Molecular Beam Epitaxy.

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  • Okada Yoshitaka
    Institute of Materials Science, University of Tsukuba, 1–1–1 Tennodai, Tsukuba, Ibaraki 305, Japan
  • Sugaya Takeyoshi
    Institute of Materials Science, University of Tsukuba, 1–1–1 Tennodai, Tsukuba, Ibaraki 305, Japan
  • Ohta Shigeru
    Institute of Materials Science, University of Tsukuba, 1–1–1 Tennodai, Tsukuba, Ibaraki 305, Japan
  • Fujita Tomoya
    Institute of Materials Science, University of Tsukuba, 1–1–1 Tennodai, Tsukuba, Ibaraki 305, Japan
  • Kawabe Mitsuo
    Institute of Materials Science, University of Tsukuba, 1–1–1 Tennodai, Tsukuba, Ibaraki 305, Japan

抄録

A continual irradiation of atomic H during the growth of GaAs in molecular beam epitaxy (MBE) has been shown to be a viable method to obtain sharp heterointerfaces and high-quality epitaxial layers. We provide some fundamentally important observations related to atomic scale mechanisms and interactions, and the growth models for atomic H-assisted homoepitaxial GaAs MBE are proposed. Atomic H has been shown to be an efficient surfactant reducing the surface and total energy of GaAs(100) that acts to promote layer-by-layer and step-flow growth mode. However, the actual growth kinetics is different depending on the growth temperature, which affects the energetic stability of atomic H adsorption on GaAs(100). Furthermore, the continual removal of surface contaminants and also the excess arsenic during the growth are thought to be another important attribute played by atomic H.

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