Initial Growth of GaAs on Vicinal Si(111) Substrates by Molecular-Beam Epitaxy.

• Yodo Tokuo

  Optoelectronics Technology Research Laboratory, 5–5 Tohkodai, Tsukuba, Ibaraki 300–26, Japan

Abstract

GaAs grown on vicinal Si(111) substrates by molecular-beam epitaxy showed a phenomenon peculiar to a (111) interface due to bond-matching during the initial growth stage (layer thickness (t), t≤ 200 nm), accompanying the growth of GaAs islands with perfect-crystalline quality. The best full-width at half-maximum of (111) GaAs X-ray diffraction in GaAs layers on vicinal Si(111) tilted by 6^° toward the [0\=11] direction was 100 arc.s. at a layer thickness of 200 nm.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 34 (10A), L1251-L1253, 1995

  The Japan Society of Applied Physics

Keywords

• GaAs on Si
• vicinal Si(111)
• double-crystal X-ray diffraction
• high crystalline quality

Details

• CRID: 1390282681223299072
• NII Article ID: 110003922532
• NII Article ID: 130004520724
• NII Article ID: 210000038446
• NII Book ID: AA10650595
• DOI: 10.1143/jjap.34.l1251
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.34.L1251
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.34.L1251/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed