Yield Measurement of Secondary Electrons Emitted from Silicon Dioxide Film in Negative-Ion Bombardment.
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- Toyota Yoshitaka
- Department of Electronic Science and Engineering, Kyoto University, Yoshida–honmachi, Sakyo–ku, Kyoto 606–01, Japan
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- Tsuji Hiroshi
- Department of Electronic Science and Engineering, Kyoto University, Yoshida–honmachi, Sakyo–ku, Kyoto 606–01, Japan
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- Gotoh Yasuhito
- Department of Electronic Science and Engineering, Kyoto University, Yoshida–honmachi, Sakyo–ku, Kyoto 606–01, Japan
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- Ishikawa Junzo
- Department of Electronic Science and Engineering, Kyoto University, Yoshida–honmachi, Sakyo–ku, Kyoto 606–01, Japan
書誌事項
- タイトル別名
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- Yield Measurement of Secondary Electron
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抄録
The yield of secondary electrons emitted from insulating materials subjected to negative-ion bombardment was studied. In general, such measurements for insulating materials are difficult because surface charging due to ion implantation makes the apparent yield unity. We used silicon dioxide (SiO2) film and a small ion current for the yield measurements. As a result, charge compensation due to the leakage current minimized the surface charging and the true yield was obtained. The experimental results showed that secondary electrons emitted due to negative-ion bombardment consist of electrons due to both kinetic emission and detachment from negative ions. In addition, it was found that the yield depends on the ion species. It was concluded that the same tendencies as those for negative-ion-implanted conductive materials are observed.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 35 (9A), 4785-4788, 1996
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681226819584
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- NII論文ID
- 10004613450
- 130004522856
- 210000039694
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4060168
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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